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Bulletin PD-20520 rev. G 02/02
10MQ100N
SCHOTTKY RECTIFIER 2.1 Amp
SMA
Major Ratings and Characteristics Characteristics
IF VRRM IFSM VF TJ @ tp = 5 s sine @1.5Apk, TJ=125C range DC
Description/Features
The 10MQ100N surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery charging, and reverse battery protection. Small foot print, surface mountable Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability
10MQ100N Units
2.1 100 120 0.68 - 55 to 150 A V A V C
Device Marking: IR1J
CATHODE
ANODE
1.40 (.055) 1.60 (.062)
2.50 (.098) 2.90 (.114)
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2
4.00 (.157) 4.60 (.181) .152 (.006) .305 (.012) 2.00 (.078) 2.44 (.096) 0.76 (.030) 1.52 (.060) .103 (.004) .203 (.008) 4.80 (.188) 5.28 (.208)
1 POLARITY
2 PART NUMBER
1.47 MIN. (.058 MIN.)
2.10 MAX. (.085 MAX. )
1.27 MIN. (.050 MIN.)
5.53 (.218) SOLDERING PAD
Outline SMA Similar to D-64 Dimensions in millimeters and (inches) For recommended footprint and soldering techniques refer to application note #AN-994
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10MQ100N
Bulletin PD-20520 rev. G 02/02
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V)
10MQ100N
100
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current * See Fig. 4 IFSM EAS IAR Max. Peak One Cycle Non-Repetitive Surge Current * See Fig. 6 Non-Repetitive Avalanche Energy Repetitive Avalanche Current
10MQ Units
1.5 120 30 3.0 0.2 A
Conditions
50% duty cycle @ TL = 126 C, rectangular wave form. On PC board 9mm2 island(.013mm thick copper pad area) 5s Sine or 3s Rect. pulse 10ms Sine or 6ms Rect. pulse TJ = 25 C, IAS = 0.8A, L = 10mH Following any rated load condition and with rated VRRM applied
A mJ A
Electrical Specifications
Parameters
VFM Max. Forward Voltage Drop * See Fig. 1 (1)
10MQ
0.78 0.85 0.63 0.68
Units
V V V V mA mA V m pF nH V/s @ 1A @ 1.5A @ 1A @ 1.5A TJ = 25 C TJ = 125 C TJ = TJ max.
Conditions
TJ = 25 C TJ = 125 C VR = rated VR
IRM
Max. Reverse Leakage Current (1) * See Fig. 2
0.1 1 0.52 78.4 38 2.0 10000
VF(TO) Threshold Voltage rt CT LS Forward Slope Resistance Typical Junction Capacitance Typical Series Inductance (Rated VR)
(1) Pulse Width < 300s, Duty Cycle < 2%
VR = 10VDC, TJ = 25C, test signal = 1Mhz Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
Thermal-Mechanical Specifications
Parameters
TJ Tstg Max. Storage Temperature Range
10MQ
- 55 to 150 80
Units
C C C/W DC operation
Conditions
Max. Junction Temperature Range (*) - 55 to 150
RthJA Max. Thermal Resistance Junction to Ambient wt Approximate Weight Case Style Device Marking
(*) dPtot dTj < 1 Rth( j-a)
0.07(0.002) g (oz.) SMA IR1J Similar D-64
thermal runaway condition for a diode on its own heatsink
2
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10MQ100N
Bulletin PD-20520 rev. G 02/02
1 T J = 150 C Reverse C urren t - I R (m A) 10 0.1 125 C 100 C 0.0 1 75 C 50 C
0 .0 01
0.0 00 1
25 C
Insta n tan eo us Forw ard C urrent - I F (A )
0 0 T J= 150 C T J= 125 C 1 T J= 25 C 20 40 60 80 100 Reverse V olta ge - V R (V )
Fig. 2 - Typical Peak Reverse Current Vs. Reverse Voltage
100 Jun ctio n C a pa citan ce - C T (p F)
T J= 25 C
10
0 .1 0.4
0 .6
0 .8
1
1 .2
1 .4
1 .6
Forw ard V oltag e D rop - V FM (V )
1 0 20 40 60 80 10 0 Reverse V oltag e - V R (V )
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
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10MQ100N
Bulletin PD-20520 rev. G 02/02
1 50 A llow ab le C a se Tem p era ture - ( C ) 1 40 1 30 1 20 1 10 1 00 90 0 0 .4 0 .8 1.2 1.6 2 2 .4 A vera ge Forw a rd C urren t - I F(AV) (A) Sq uare w a ve (D = 0.50) 80% Rated V R a pp lied
se e no te (2 ) D D D D D = = = = = 0 .20 0 .25 0 .33 0 .50 0 .75
1 .6 A vera ge Pow er Loss - (W a tts) 1 .4 1 .2 1 0 .8 0 .6 0 .4 0 .2 0 0 0.4 0.8 1.2 1 .6 2 2 .4 Averag e Forw ard C urrent - I F(AV) (A ) RM S Lim it DC D D D D D = = = = = 0.20 0.25 0.33 0.50 0.75
DC
Fig. 4 - Maximum Average Forward Current Vs. Allowable Lead Temperature
Fig. 5 - Maximum Average Forward Dissipation Vs. Average Forward Current
100 N on-Rep etitive Surg e C urren t - I FS M (A)
10
A t A ny Ra ted Loa d C on dition A nd W ith Ra ted V RRM Ap plied Follow ing Surge 1 10
100
1000
10000
Squa re W a ve Pulse D ura tion - t p (m icrosec)
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
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10MQ100N
Bulletin PD-20520 rev. G 02/02
Tape & Reel Information
NOTE: 1. OUTLINE CONFORMS TO EIA-481.
Dimensions in millimeters and (inches)
Marking & Identification
Each device has 8 characters, configurated 4 digits on two rows, for identification. The first row designates the device as manufactured by International Rectifier as indicated by the letters "IR", and the Part Number ( indicates the current rating and voltage/process). The second row indicates the year and the week of manufacturing.
Ordering Information
10MQ SERIES - TAPE AND REEL WHEN ORDERING, INDICATE THE PART NUMBER AND THE QUANTITY ( IN MULTIPLES OF 7500 PIECES). EXAMPLE: 10MQ100TR - 15000 PIECES
10MQ SERIES - BULK QUANTITIES
I R 1J Voltage/ Process Current Rating (1A) IR logo C E F H J = = = = = 15 V 30 V 40 V 60 V 100 V
WHEN ORDERING, INDICATE THE PART NUMBER AND THE QUANTITY ( IN MULTIPLES OF 1000 PIECES). EXAMPLE: 10MQ100 - 2000 PIECES
YY WW
(Date Code) Week Year
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10MQ100N
Bulletin PD-20520 rev. G 02/02
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 02/02
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